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Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

2008

Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.

Materials sciencebusiness.industryN-TYPE GANLIGHT-EMITTING-DIODEStechnology industry and agriculturePLASMA-INDUCED DAMAGECondensed Matter PhysicsElectronic Optical and Magnetic Materialslaw.inventionlawOptoelectronicsReactive-ion etchingbusinessInstrumentationDiodeLight-emitting diodeLeakage (electronics)The European Physical Journal Applied Physics
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